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HIKSEMI – HS-SSD-FUTUREX Lite 1024G NVME Gen 4
Specifications
Capacity
1024 GB (1TB)
Sequential Read Speed
Up to 7400 MB/s
Sequential Write Speed
Up to 6800 MB/s
Interface
PCIe Gen 4 x4 (NVMe)
Form Factor
M.2 2280
HIKSEMI – HS-SSD-FUTUREX 1024G NVME Gen 4
Specifications
Capacity
1024 GB (1TB)
Sequential Read Speed
Up to 7400 MB/s
Sequential Write Speed
Up to 6800 MB/s
Interface
PCIe Gen 4 x4 (NVMe)
Form Factor
M.2 2280
HIKSEMI – HS-SSD-FUTURE Lite 2048G NVME Gen 4
Specifications
Capacity
2048 GB (2TB)
Sequential Read Speed
Up to 7400 MB/s
Sequential Write Speed
Up to 6800 MB/s
Interface
PCIe Gen 4 x4 (NVMe)
Form Factor
M.2 2280
HIKSEMI – HS-SSD-FUTURE Lite 1024G NVME Gen 4
Specifications
Capacity
1024 GB (1TB)
Sequential Read Speed
Up to 7400 MB/s
Sequential Write Speed
Up to 6500 MB/s
Interface
PCIe Gen 4 x4 (NVMe)
Form Factor
M.2 2280
HIKSEMI – HS-SSD-FUTURE Eco 512G NVME Gen 4
Specifications
Capacity
512 GB
Sequential Read Speed
Up to 5000 MB/s
Sequential Write Speed
Up to 4400 MB/s
Interface
PCIe Gen 4 x4 (NVMe)
Form Factor
M.2 2280
HIKSEMI – HS-SSD-E1000 1024G NVME Gen 3
Specifications
Capacity
1024 GB (1TB)
Sequential Read Speed
Up to 3500 MB/s
Sequential Write Speed
Up to 3000 MB/s
Interface
PCIe Gen 3 x4 (NVMe)
Form Factor
M.2 2280
HIKSEMI – HS-SSD-E1000 512G NVME Gen 3
Specifications
Capacity
512 GB
Sequential Read Speed
Up to 3500 MB/s
Sequential Write Speed
Up to 3000 MB/s
Interface
PCIe Gen 3 x4 (NVMe)
Form Factor
M.2 2280
HIKSEMI – HS-SSD-WAVE(P) 256G NVME Gen 3
Capacity
256 GB
Sequential Read Speed
Up to 2300 MB/s
Sequential Write Speed
Up to 1800 MB/s
Interface
PCIe Gen 3 x4 (NVMe)
Form Factor
M.2 2280
HIKSEMI – HS-SSD-WAVE(P) 128G NVME Gen 3
Specifications
Capacity
128 GB
Sequential Read Speed
Up to 2100 MB/s
Sequential Write Speed
Up to 1100 MB/s
Interface
PCIe Gen 3 x4 (NVMe)
Form Factor
M.2 2280
HIKSEMI – HS-SSD-E100(STD)/512GB SATA SSD
- Hikvision brand
- 512GB of Storage capacity
- Max. read speed (MB/s): 550
- Max. write speed (MB/s): 480
- SATA III 6 Gb/s Interface
- HikVision E100 3D NAND offers the potential for higher capacity, performance, and stability.
HIKSEMI – HS-SSD-E100(STD)/256GB SATA SSD
Key Features:
- Storage Capacity: 256GB
- Interface: SATA III (6Gbps)
- Form Factor: 2.5-inch for compatibility with most laptops and desktops
- Sequential Read Speed: Up to 550MB/s
- Sequential Write Speed: Up to 500MB/s
- Controller: High-performance memory controller for better speed and reliability
- NAND Flash: Utilizes TLC (Triple-Level Cell) NAND for better endurance and affordability
- TRIM Support: Helps maintain consistent performance and extends the SSD’s lifespan
- MTBF (Mean Time Between Failures): 1.5 million hours
- Shock Resistance: Up to 1500G/0.5ms for enhanced durability
- Energy Efficiency: Consumes less power compared to HDDs, making it perfect for laptops
- Weight: Lightweight at around 40g for easy installation and portability
HIKSEMI – HS-SSD-E100(STD)/128GB SATA SSD
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High Performance
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3D Stacking Technology
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Safer Data Protection
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Shock Resistant
UNV 256GB 103 SSD-S3 | SATA III | 2.5" Internal SSD
Key Specifications :
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Up to 50% Faster Boot-Up Time compared to traditional HDDs.
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30x More Robust than HDDs, resistant to shock and vibration.
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Ultra-Low Power Consumption: Ideal for laptops and energy-efficient systems.
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SATA III Interface (6 Gb/s): Sequential read speeds up to 560MB/s and write speeds up to 510MB/s.
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3D TLC NAND Technology: Offers durability and consistent performance.
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MTBF ≥ 1.5 million hours: Designed for long-term reliability.
UNV 128GB 103 SSD-S3 | SATA III | 2.5" Internal SSD
Key Specification :
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Up to 50% Faster Boot-Up Time compared to traditional HDDs.
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30x More Robust than HDDs, resistant to shock and vibration.
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Ultra-Low Power Consumption: Ideal for laptops and energy-efficient systems.
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SATA III Interface (6 Gb/s): Sequential read speeds up to 560MB/s and write speeds up to 510MB/s.
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3D TLC NAND Technology: Offers durability and consistent performance.
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MTBF ≥ 1.5 million hours: Designed for long-term reliability.
Samsung 1TB 990 PRO PCIe Gen 4.0 x4 M.2 Internal SSD
Key Specification :
- 1TB Storage Capacity
- M.2 2280 Form Factor
- PCIe 4.0 x4 / NVMe 2.0 Interface
- Sequential Reads up to 7450 MB/s
- Sequential Writes up to 6900 MB/s
- Up to 600TB TBW (Total Bytes Written)
- Samsung V-NAND Flash Technology
- AES 256-Bit Encryption
Samsung 2TB 990 PRO PCIe Gen 4.0 x4 M.2 Internal SSD
Key Specifications
- 2TB Storage Capacity
- M.2 2280 Form Factor
- PCIe 4.0 x4 / NVMe 2.0 Interface
- Sequential Reads up to 7450 MB/s
- Sequential Writes up to 6900 MB/s
- Up to 600TB TBW (Total Bytes Written)
- Samsung V-NAND Flash Technology
- AES 256-Bit Encryption
Samsung 990 EVO 1TB Gen4x4 NVMe Internal SSD
Key Specifications
- Blazing Speeds: Read up to 7,450 MB/s and write up to 6,900 MB/s.
- 1TB Capacity: Perfect for large file storage, gaming, and multitasking.
- V-NAND Technology: Ensures durability and energy efficiency.
- PCIe Gen4: Next-level performance with cutting-edge interface.
- 1-Year Warranty: Backed by Samsung’s reliable support.
